Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. , Part 2 45, L1084-L1086 (2006).
[Crossref]
A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, "Photonic crystal laser lift-off GaN light-emitting diodes," Appl. Phys. Lett. 88, 133514 (2006).
[Crossref]
S. J. Lee, "Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes," Opt. Eng. 45, 014601 (2006).
[Crossref]
T. Fujii, A. David, Y. Gao, M. Iza, S. P. DenBaars, E. L. Hu, C. Weisbuch, and S. Nakamura, "Cone-shaped surface GaN-based light-emitting diodes," Phys. Status Solidi C 2, 2836-2840 (2005).
[Crossref]
U. Strauss, H.-J. Lugauer, A. Weimar, J. Baur, G. Brüderl, D. Eisert, F. Kühn, U. Zehnder, and V. Härle, "Progress of InGaN light emitting diodes on SiC," Phys. Status Solidi C 0, 276-279 (2002).
[Crossref]
R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, "High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett. 75, 2365-2367 (1999).
[Crossref]
W. N. Carr, "Photometric figures of merit for semiconductor luminescent sources operating in spontaneous mode," Infrared Phys. 6, 1-19 (1966).
[Crossref]
R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, "High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett. 75, 2365-2367 (1999).
[Crossref]
A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, "Photonic crystal laser lift-off GaN light-emitting diodes," Appl. Phys. Lett. 88, 133514 (2006).
[Crossref]
W. N. Carr, "Photometric figures of merit for semiconductor luminescent sources operating in spontaneous mode," Infrared Phys. 6, 1-19 (1966).
[Crossref]
Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. , Part 2 45, L1084-L1086 (2006).
[Crossref]
S. J. Lee, "Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes," Opt. Eng. 45, 014601 (2006).
[Crossref]
U. Strauss, H.-J. Lugauer, A. Weimar, J. Baur, G. Brüderl, D. Eisert, F. Kühn, U. Zehnder, and V. Härle, "Progress of InGaN light emitting diodes on SiC," Phys. Status Solidi C 0, 276-279 (2002).
[Crossref]
T. Fujii, A. David, Y. Gao, M. Iza, S. P. DenBaars, E. L. Hu, C. Weisbuch, and S. Nakamura, "Cone-shaped surface GaN-based light-emitting diodes," Phys. Status Solidi C 2, 2836-2840 (2005).
[Crossref]
Standing-wave modes are a consequence of propagating light interfering with itself due to the total internal reflection. Discussions on waveguides can be found in C. A. Balanis, Advanced Engineering Electromagnetics (Wiley, 1989), pp. 366-372.
Light can be trapped at higher bounce mode as well. In this case the incident angle is smaller than that of the lowest bounce mode (m = 1), so that light is more likely to exit than the lowest mode.
J.-H. Liang, T. Maruyama, Y. Ogawa, S. Kobayashi, J. Sonoda, H. Urae, S. Tomita, Y. Tomioka, S. Kon, and Y. Nakano, "High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure," in Proceedings of 14th International Conference on Indium Phosphide and Related Materials Conference (IEEE, 2002), pp. 119-122.
[PubMed]
E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge Press, 2006), p. 151.