Abstract

Measurements of the optical gain in a semiconductor laser using a $20\text{\hspace{0.17em} MHz}$ resolution optical spectrum analyzer are presented for what is believed to be the first time. The high resolution allows for accurate gain measurements close to the lasing threshold. This is demonstrated by gain measurements on a bulk InGaAsP $1.5\mu \text{m}$ Fabry–Perot laser. Combined with direct measurement of transparency carrier density values, parameters were determined for characterizing the gain at a range of wavelengths and temperatures. The necessity of the use of a logarithmic gain model is shown.

© 2006 Optical Society of America

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