Abstract

A processing technique using femtosecond laser pulses to microstructure the surface of a silicon avalanche photodiode (APD) has been used to enhance its near-infrared (near-IR) response. Experiments were performed on a series of APDs and APD arrays using various structuring parameters and poststructuring annealing sequences. Following thermal annealing, we were able to fabricate APD arrays with quantum efficiencies as high as $58\%$ at 1064 nm without degradation of their noise or gain performance. Experimental results provided evidence to suggest that the improvement in charge collection is a result of increased absorption in the near-IR.

© 2006 Optical Society of America

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