Aging and thermal stability of Mg/SiC and Mg/Y<sub>2</sub>O<sub>3</sub> reflection multilayers in the 25–35 nm region

Takeo Ejima; Atsushi Yamazaki; Takanori Banse; Katsuhiko Saito; Yuji Kondo; Satoshi Ichimaru; Hisataka Takenaka

doi:10.1364/AO.44.005446

Applied Optics
Vol. 44,
Issue 26,
pp. 5446-5453
(2005)
•https://doi.org/10.1364/AO.44.005446

Aging and thermal stability of Mg/SiC and Mg/Y₂O₃ reflection multilayers in the 25–35 nm region

Takeo Ejima, Atsushi Yamazaki, Takanori Banse, Katsuhiko Saito, Yuji Kondo, Satoshi Ichimaru, and Hisataka Takenaka

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Takeo Ejima, Atsushi Yamazaki, Takanori Banse, Katsuhiko Saito, Yuji Kondo, Satoshi Ichimaru, and Hisataka Takenaka, "Aging and thermal stability of Mg/SiC and Mg/Y₂O₃ reflection multilayers in the 25–35 nm region," Appl. Opt. 44, 5446-5453 (2005)

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Abstract

Reflection measurements in the 25–35 nm region were made for Mg/SiC and Mg/Y₂O₃ multilayers kept in a low-humidity atmosphere for 4 or 5 years. Aged Mg/SiC multilayers keep their reflectances, and the reflectance value at 31.2 nm is 0.44 at 10° of the normal angle of incidence. Aged Mg/Y₂O₃ multilayers change reflectance as top layer materials, and the best value at 30.1 nm is 0.40 at 10°. Reflection measurements are also made for Mg-based multilayers that are annealed from room temperature to 400 °C at 50 °C intervals. Both multilayers keep their reflectance at annealing temperatures of 200 °C. These results suggest that both Mg-based multilayers can be applied to practical optics.

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Serial Number	Fabrication Date	Storage Period (years/months)	Multilayer Appearance
284	8 April 1999	5/2	Mirror
285	9 April 1999	5/2	Spot
295	24 April 1999	5/2	Mirror
296	24 April 1999	5/2	Mirror
356	27 August 1999	4/10	Mirror
452	1 March 2000	4/1	Mirror
453	2 March 2000	4/1	Dark

Serial Number	Periodic Length Before Storage (nm)	Periodic Length After Storage (nm)	Layer Structure from GIXRD Analysis (nm)	σ_Y₂O₃/Mg or σ_SiC/Mg (nm)	σ_Mg/Y₂O₃ or σ_Mg/SiC (nm)	σ_surf (nm)
284	15.91	15.70	[Mg 12.19 nm/Y₂O₃ 3.51 nm] × 10 + Mg 12.54 nm	0.76	1.96	0.32
285	15.94	15.68	[Mg 12.15 nm/Y₂O₃ 3.53 nm] × 10	0.42	1.60	0.42
295	17.07	16.47	[SiC 6.13 nm/Mg 10.34 nm] × 10 + SiC 5.01 nm	0.91	0.66	0.57
296	15.65	15.61	[SiC 5.99 nm/Mg 9.62 nm] × 10 + SiC 5.50 nm	1.08	0.92	0.55
356	21.13	20.04	[Sic 7.26 nm/Mg 12.78 nm] × 10 + SiC 7.48 nm	1.43	0.89	0.56
452	16.93	16.88	[SiC 6.21 nm/Mg 10.67 nm] × 10 + SiC 5.37 nm	1.04	0.67	0.54
453	15.16	15.07	[SiC 5.62 nm/Mg 9.45 nm] × 10 + SiC 5.13 nm	1.02	0.61	0.61

Serial Number	Peak Position (nm)	Reflectance	FWHM (nm)
284	30.1	0.40 ± 0.01	2.6
285	30.0	0.31 ± 0.01	2.7
295	31.3	0.46 ± 0.02	2.5
296	29.3	0.42 ± 0.03	2.4
356	37.2	0.38 ± 0.01	3.8
452	31.2	0.44 ± 0.04	2.7
453	28.7	0.08 ± 0.01	2.8

Serial Number	Fabrication Date	Storage Period (years/months)	Multilayer Appearance
284	8 April 1999	5/2	Mirror
285	9 April 1999	5/2	Spot
295	24 April 1999	5/2	Mirror
296	24 April 1999	5/2	Mirror
356	27 August 1999	4/10	Mirror
452	1 March 2000	4/1	Mirror
453	2 March 2000	4/1	Dark

Serial Number	Periodic Length Before Storage (nm)	Periodic Length After Storage (nm)	Layer Structure from GIXRD Analysis (nm)	σ_Y₂O₃/Mg or σ_SiC/Mg (nm)	σ_Mg/Y₂O₃ or σ_Mg/SiC (nm)	σ_surf (nm)
284	15.91	15.70	[Mg 12.19 nm/Y₂O₃ 3.51 nm] × 10 + Mg 12.54 nm	0.76	1.96	0.32
285	15.94	15.68	[Mg 12.15 nm/Y₂O₃ 3.53 nm] × 10	0.42	1.60	0.42
295	17.07	16.47	[SiC 6.13 nm/Mg 10.34 nm] × 10 + SiC 5.01 nm	0.91	0.66	0.57
296	15.65	15.61	[SiC 5.99 nm/Mg 9.62 nm] × 10 + SiC 5.50 nm	1.08	0.92	0.55
356	21.13	20.04	[Sic 7.26 nm/Mg 12.78 nm] × 10 + SiC 7.48 nm	1.43	0.89	0.56
452	16.93	16.88	[SiC 6.21 nm/Mg 10.67 nm] × 10 + SiC 5.37 nm	1.04	0.67	0.54
453	15.16	15.07	[SiC 5.62 nm/Mg 9.45 nm] × 10 + SiC 5.13 nm	1.02	0.61	0.61

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Applied Optics