Abstract

The quantum efficiency of silicon photodiodes and factors that might be responsible for the drop in quantum efficiency in the near-infrared spectral range were analyzed. It was shown that poor reflectivity from the rear surface of the die could account for a decrease in Si photodiode quantum efficiency in near-infrared spectral range by more than 20%. The photodiode quantum efficiency was modeled with an appropriate representation for the carrier-collection efficiency dependence on the die penetration depth. A corrected analytical expression for calculating the photodiode quantum efficiency is given. Some methods to improve the quantum efficiency of silicon photodiodes in near-infrared spectral range are discussed.

© 2003 Optical Society of America

Spectral supralinearity prediction of silicon photodiodes in the near-infrared range

Minoru Tanabe, Kuniaki Amemiya, Takayuki Numata, and Daiji Fukuda
Appl. Opt. 54(36) 10705-10710 (2015)

Quantum efficiency of black silicon photodiodes at VUV wavelengths

T. Tsang, A. Bolotnikov, A. Haarahiltunen, and J. Heinonen
Opt. Express 28(9) 13299-13309 (2020)

High-resolution mapping of quantum efficiency of silicon photodiode via optical-feedback laser microthermography

Vernon Julius Cemine, Carlo Mar Blanca, and Caesar Saloma
Appl. Opt. 45(27) 6947-6953 (2006)

Spectral supralinearity of silicon photodiodes with over-filled illumination in the near-infrared region

Minoru Tanabe
Appl. Opt. 59(26) 8038-8046 (2020)

Spectral reflectance and responsivity of Ge- and InGaAs-photodiodes in the near-infrared: measurement and model

M. López, H. Hofer, K. D. Stock, J. C. Bermúdez, A. Schirmacher, F. Schneck, and S. Kück
Appl. Opt. 46(29) 7337-7344 (2007)