Abstract

The manufacture of InSb photoconductive detectors is briefly described. A simplified design theory is given, followed by a description of typical performance between room temperature and 77°K. The practical embodiment of photocells is described, together with the design of arrays of detector elements.

© 1965 Optical Society of America

Indium Antimonide Submillimeter Photoconductive Detectors

E. H. Putley
Appl. Opt. 4(6) 649-657 (1965)

Properties of indium antimonide detectors for use as transfer standards for detector calibrations

Louis-Philippe Boivin
Appl. Opt. 37(10) 1924-1929 (1998)

Detectors for Ultraviolet, Visible, and Infrared Radiation

R. A. Smith
Appl. Opt. 4(6) 631-638 (1965)

Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity

Sangjo Choi and Kamal Sarabandi
Appl. Opt. 52(35) 8432-8438 (2013)

Extrinsic Detectors

Henry Levinstein
Appl. Opt. 4(6) 639-647 (1965)