Abstract

An infrared polariscope was constructed for photoelastic stress analysis of semiconductor materials transmitting in the 0.7 μ to 1.2 μ spectral region. The instrument which functions as either a plane or circular polariscope permits specimens up to 40-mm diam to be studied in collimated radiation. Glan–Thompson prisms are used for the polarizer and analyzer, and the associated quarter-wave plates are made of quartz. An infrared image-converter tube is used to observe the stress patterns produced by induced and frozenin stresses of specimens. A mechanical stage provides for rotary motion and lateral displacement of the specimen in two mutually perpendicular directions in a plane normal to the optical axis of the polariscope, and also allows the specimen to be stressed by a calibrated mechanical load. A material fringe value of 27 kg-cm−1 fringe−1 was determined for silicon and used to estimate residual stresses in a boule of silicon. Photographs of isoclinic and isochromatic fringe patterns at a wavelength of 1.1 μ are presented.

© 1965 Optical Society of America

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