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Advances in vacuum ultraviolet thin-film filter technology have been made through the use of filter designs with multilayers of materials such as Al2O3, BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2. Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 × 9 RE orbit will expose the instrument to approximately 250 krad of radiation. Because to our knowledge no previous studies have been made on the potential radiation damage of these materials in the thin-film format, we report on such an assessment here. Transmittances and reflectances of BaF2, CaF2, HfO2, MgF2, and SiO2 thin films on MgF2 substrates, Al2O3 thin films on fused-silica substrates, uncoated fused silica and MgF2, and four multilayer filters made from these materials were measured from 120 to 180 nm before and after irradiation by 250 krad from a 60Co gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 to 300 nm indicates 2–5% radiation-induced absorption near 260 nm in some of the samples with MgF2 substrates. From these measurements we conclude that far-ultraviolet filters made from the materials tested should experience less than 5% change from exposure to up to 250 krad of high-energy radiation in space applications.
© 1994 Optical Society of America
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