Abstract

The photoresist processes used for lithography at wavelengths from the deep UV to the soft x ray will need to accommodate the strong resist film absorbance inherent in this wavelength range. Already silylation processes have been demonstrated as manufacturable near-surface-imaged resists in the deep UV. In addition other chemistries are being developed that take advantage of near-surface or at-the-surface imaging. Together these new approaches to imaging will provide not only greater wavelength flexibility but have potential for improved exposure and focus tolerances as well. These attributes will become important as device dimensions are reduced from 0.35 down to 0.1 μm.

© 1993 Optical Society of America

Characterization of AZ PN114 resist for soft-x-ray projection lithography

K. Early, D. M. Tennant, D. Y. Jeon, P. P. Mulgrew, A. A. MacDowell, O. R. Wood, G. D. Kubiak, and D. A. Tichenor
Appl. Opt. 32(34) 7044-7049 (1993)

Chemically amplified soft-x-ray resists: sensitivity, resolution, and molecular photodesorption

Glenn D. Kubiak, Robert Q. Hwang, Michelle T. Schulberg, Daniel A. Tichenor, and Kathleen Early
Appl. Opt. 32(34) 7036-7043 (1993)

Radiation hardness of molybdenum silicon multilayers designed for use in a soft-x-ray projection lithography system

David P. Gaines, Ronnie C. Spitzer, Natale M. Ceglio, Michael Krumrey, and Gerhard Ulm
Appl. Opt. 32(34) 6991-6998 (1993)

Multilayer mirror technology for soft-x-ray projection lithography

D. G. Stearns, R. S. Rosen, and S. P. Vernon
Appl. Opt. 32(34) 6952-6960 (1993)

Wavelength considerations in soft-x-ray projection lithography

Andrew M. Hawryluk and Natale M. Ceglio
Appl. Opt. 32(34) 7062-7067 (1993)