Abstract

We report an investigation of optical waveguides that are fabricated by successive ion implantations at different energies of Si⁺ or N⁺ ions into SiO₂ thermally grown on 〈100〉 Si substrates. Implantations of both the species result in optical waveguides that sustain propagation over the 5-cm length of the sample. Loss coefficients for the waveguides are measured by using Raman spectroscopy and are compared with the values obtained in the usual manner by collecting elastically scattered light. A typical loss determined by the Raman technique was 3.2 dB/cm for the Si-implanted waveguide. Raman data that are obtained in the waveguided configuration show a contribution to loss from luminescence. The luminescence signal is found to be modulated by an interference between the directly scattered radiation from the waveguide region and that reflected from the Si–SiO₂ interface. Rapid thermal annealing is found to reduce the intensity of the luminescence and thus lower the value of the loss coefficient. The lowest loss obtained for the Si-implanted samples is 2.7 dB/cm and 3 dB/cm for the N⁺-implanted sample.

© 1993 Optical Society of America

Low loss Si₃N₄–SiO₂ optical waveguides on Si

C. H. Henry, R. F. Kazarinov, H. J. Lee, K. J. Orlowsky, and L. E. Katz
Appl. Opt. 26(13) 2621-2624 (1987)

Optical properties of a single mode planar waveguide in Nd:YVO₄ fabricated by multienergy He ion implantation

Xiu-Hong Liu, Shao-Mei Zhang, Jin-Hua Zhao, Ming Chen, Bao-Gang Peng, Xi-Feng Qin, and Ke-Ming Wang
Appl. Opt. 50(21) 3865-3870 (2011)

Investigation of a chalcohalide glass optical waveguide structure fabricated by dual-energy carbon-ion implantation

Xiao-Fei Yu, Tao Liu, Lian Zhang, Yu-Fan Zhou, Tie-Jun Wang, and Xue-Lin Wang
Appl. Opt. 53(2) 278-282 (2014)

Analysis of Si⁺-implanted Nd:YVO₄ crystal: the relation between lattice damage and waveguide formation

Yu-Jie Ma, Fei Lu, Xian-Bing Ming, Ming Chen, Xiu-Hong Liu, and Jiao-Jian Yin
Appl. Opt. 51(23) 5657-5663 (2012)

Optical waveguide characterization of dielectric films deposited by reactive low-voltage ion plating

Thomas C. Kimble, Marc D. Himel, and Karl H. Guenther
Appl. Opt. 32(28) 5640-5644 (1993)