Calibration of silicon photodiodes by photoacoustics

Eduard Halaška; Miroslav Dienstbier; Petr Sladký

doi:10.1364/AO.32.000038

Applied Optics
Vol. 32,
Issue 1,
pp. 38-43
(1993)
•https://doi.org/10.1364/AO.32.000038

Calibration of silicon photodiodes by photoacoustics

Eduard Halaška, Miroslav Dienstbier, and Petr Sladký

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Eduard Halaška, Miroslav Dienstbier, and Petr Sladký, "Calibration of silicon photodiodes by photoacoustics," Appl. Opt. 32, 38-43 (1993)

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Abstract

We present a new approach to the calibration of silicon photodiodes that are used for light (radiometric) power measurements. We describe the photoacoustic method for the determination of internal quantum efficiency and absolute spectral response of silicon photodiodes in the photovoltaic short-circuit mode. Measurements were taken for the different structures of silicon photodiodes.

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λ (nm)	ρ	η	R (A/W)
(a) Sample 1 (P/N)
457.9	0.3694	0.738	0.172
514.5	0.3408	0.926	0.253
632.8	0.3176	0.956	0.333
(b) Sample 2 (P/N)
457.9	0.4056	0.650	0.143
514.5	0.3835	0.830	0.212
632.8	0.3402	0.857	0.289
(c) Sample 3 (SiO₂/P/N)
457.9	0.1772	0.447	0.136
514.5	0.1174	0.718	0.263
632.8	0.0945	0.803	0.371

Sample	a	b	c
1 (P/N)	−4.3163 × 10⁻⁶	5.6283 × 10⁻³	−1.5004
2 (P/N)	−3.2488 × 10⁻⁶	4.3786 × 10⁻³	−1.1808
3 (SiO₂/P/N)	−7.6105 × 10⁻⁶	9.6449 × 10⁻³	−2.6848

λ (nm)	ρ	η	R (A/W)
(a) Sample 1 (P/N)
457.9	0.3694	0.738	0.172
514.5	0.3408	0.926	0.253
632.8	0.3176	0.956	0.333
(b) Sample 2 (P/N)
457.9	0.4056	0.650	0.143
514.5	0.3835	0.830	0.212
632.8	0.3402	0.857	0.289
(c) Sample 3 (SiO₂/P/N)
457.9	0.1772	0.447	0.136
514.5	0.1174	0.718	0.263
632.8	0.0945	0.803	0.371

Sample	a	b	c
1 (P/N)	−4.3163 × 10⁻⁶	5.6283 × 10⁻³	−1.5004
2 (P/N)	−3.2488 × 10⁻⁶	4.3786 × 10⁻³	−1.1808
3 (SiO₂/P/N)	−7.6105 × 10⁻⁶	9.6449 × 10⁻³	−2.6848

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Equations (18)

Applied Optics