Abstract
An investigation of subnanosecond switching of 119-μm radiation achieved by irradiating high-resistivity silicon wafers with 1.7-ns, 337-nm pulses from a nitrogen laser is presented. The experimental results are compared with a one-dimensional numerical multilayer model, which accounts for the generation, recombination, and diffusion of the free carriers and the resulting change of the far-infrared optical properties of the Si wafer.
© 1992 Optical Society of America
Full Article | PDF ArticleMore Like This
J. Burghoorn, J. P. Kaminski, R. C. Strijbos, T. O. Klaassen, and W. Th. Wenckebach
J. Opt. Soc. Am. B 9(10) 1888-1891 (1992)
D. K. Mansfield, Peter A. Krug, M. Vocaturo, L. Guttadora, M. Rockmore, and K. Micai
Appl. Opt. 31(24) 5030-5033 (1992)
B. W. McCaul
Appl. Opt. 9(3) 653-663 (1970)