Laser calorimeter for UV absorption measurement of dielectric thin films

N. K. Sahoo; K. V. S. R. Apparao

doi:10.1364/AO.31.006111

Applied Optics
Vol. 31,
Issue 28,
pp. 6111-6116
(1992)
•https://doi.org/10.1364/AO.31.006111

Laser calorimeter for UV absorption measurement of dielectric thin films

N. K. Sahoo and K. V. S. R. Apparao

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N. K. Sahoo and K. V. S. R. Apparao, "Laser calorimeter for UV absorption measurement of dielectric thin films," Appl. Opt. 31, 6111-6116 (1992)

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Abstract

We describe a dual-technique laser calorimeter for measuring the absorption of dielectric thin films in the UV region below 400 nm. The instrument measures the temperature rise and absorption of a sample simultaneously by two independent techniques, namely, a resistance thermometer and a temperature transducer. The absorption constant β and extinction coefficient κ of Sb₂O₃ and ZrO₂ films at 308 and 337 nm are measured by using the calorimeter. The principle, construction, and application of the calorimeter are described.

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Sample thermometer resistance	R_s = 28.30 Ω
Reference thermometer resistance	R_r = 27.75 Ω
Bridge supply voltage	V_s = 5.0 V
Bridge output voltage	V_o = 0.176 mV
Temperature coefficient of resistance	α = 2.98 × 10⁻³/°C
Laser power and wavelength (visible) (cw)	W = 720 mW, 515 nm
Laser power and wavelength (UV) (av)	W = 120 mW, 337 nm
Thermal capacity	C = 3.56 J/°C
Maximum temperature rise	ΔT_m = 0.455°C
Laser irradiation time	t = 720 s
Effective thermal conductance	G_e = 9.98 × 10⁻³ mW/°C
Sample absorption	A_film = 0.125%
Absorption correction factor	F(H, a, r, l) = 1.27

		Absorption Constants β Measured With

Sample	λ (nm)	Resistance Thermometer β_THR (cm⁻¹)	Temperature Transducer β_TRA(cm⁻¹)	Mean β(cm⁻¹)	Extinction Coefficient κ
Fused silica substrate	308	0.31 × 10⁻¹	0.32 × 10⁻¹	0.32 × 10⁻¹	7.84 × 10⁻⁸
Sb₂O₃ film	308	1.05 × 10³	1.06 × 10³	1.06 × 10³	2.60 × 10⁻³
Sb₂O₃ film	337	3.09 × 10²	3.11 × 10²	3.10 × 10²	8.31 × 10⁻⁴
ZrO₂ film	337	2.38 × 10²	2.37 × 10²	2.38 × 10²	6.38 × 10⁻⁴

Film	λ (nm)	Extinction Coefficient κ	Reference
ZnS	515	2.76 × 10⁻⁴	Present work
ZnS	515	2.7 × 10⁻⁴	Pulker12
ZrO₂	515	1.92 × 10⁻⁴	Present work
ZrO₂	515	1.8 × ¹⁰⁻⁴	Pulker12

Sample thermometer resistance	R_s = 28.30 Ω
Reference thermometer resistance	R_r = 27.75 Ω
Bridge supply voltage	V_s = 5.0 V
Bridge output voltage	V_o = 0.176 mV
Temperature coefficient of resistance	α = 2.98 × 10⁻³/°C
Laser power and wavelength (visible) (cw)	W = 720 mW, 515 nm
Laser power and wavelength (UV) (av)	W = 120 mW, 337 nm
Thermal capacity	C = 3.56 J/°C
Maximum temperature rise	ΔT_m = 0.455°C
Laser irradiation time	t = 720 s
Effective thermal conductance	G_e = 9.98 × 10⁻³ mW/°C
Sample absorption	A_film = 0.125%
Absorption correction factor	F(H, a, r, l) = 1.27

		Absorption Constants β Measured With

Sample	λ (nm)	Resistance Thermometer β_THR (cm⁻¹)	Temperature Transducer β_TRA(cm⁻¹)	Mean β(cm⁻¹)	Extinction Coefficient κ
Fused silica substrate	308	0.31 × 10⁻¹	0.32 × 10⁻¹	0.32 × 10⁻¹	7.84 × 10⁻⁸
Sb₂O₃ film	308	1.05 × 10³	1.06 × 10³	1.06 × 10³	2.60 × 10⁻³
Sb₂O₃ film	337	3.09 × 10²	3.11 × 10²	3.10 × 10²	8.31 × 10⁻⁴
ZrO₂ film	337	2.38 × 10²	2.37 × 10²	2.38 × 10²	6.38 × 10⁻⁴

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Applied Optics