Abstract

The low-pressure chemical vapor deposition of silicon–oxynitride films for applications as integrated optical waveguides on silicon substrates, using gas compositions of SiH2Cl2–NH3–N2O, SiH2Cl2–NH3–O2, and SiH4–NH3–O2, has been investigated with respect to deposition rate, uniformity, reproducibility in the 1.46–2 index range, and propagating loss. The best results were obtained with the SiH2Cl2–NH3–O2 reaction, which provides a deposition rate up to 30 nm/min and a thickness variation across a wafer below 3% at propagation losses below 0.5 dB/cm.

© 1992 Optical Society of America

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