Abstract

A correlation between the spectral output of 1.3 μm InGaAsP semiconductor diode lasers and the distribution along the length and width of the active region of strain and scattering centers is reported. The strain and scattering center distributions in the active region were obtained by measuring and analyzing the spatially resolved and polarization resolved electroluminescence along the active region of the lasers. Measurements were made on gain-guided, planar buried heterostructure, and arrowhead buried crescent lasers. The results suggest that the material properties of the laser structure affect the longitudinal mode spectrum.

© 1991 Optical Society of America

Spatially and polarization resolved electroluminescence of 1.3-μm InGaAsP semiconductor diode lasers

Frank H. Peters and Daniel T. Cassidy
Appl. Opt. 28(17) 3744-3750 (1989)

Model of the spectral output of gain-guided and index-guided semiconductor diode lasers

Frank H. Peters and Daniel T. Cassidy
J. Opt. Soc. Am. B 8(1) 99-105 (1991)

Spontaneous-emission factor of semiconductor diode lasers

Daniel T. Cassidy
J. Opt. Soc. Am. B 8(4) 747-752 (1991)

Experimental confirmation of internal scattering as a dominant mechanism determining the longitudinal mode spectra of 1.3-μm semiconductor diode lasers

Joseph E. Hayward and Daniel T. Cassidy
J. Opt. Soc. Am. B 9(7) 1151-1157 (1992)

Frequency modulation spectroscopy at 1.3 μm using InGaAsP lasers: a prototype field instrument for atmospheric chemistry research

T. J. Johnson, F. G. Wienhold, J. P. Burrows, and G. W. Harris
Appl. Opt. 30(4) 407-413 (1991)