Abstract

We present simulation experiments to show the feasibility of using a corrugation grating structure at the silicon–silicon dioxide interface to reduce photon-absorption depth and therefore to improve response times for shallow p-n junction photodiodes for use in the optical interconnection of very-large-scale-integrated circuits. A fabrication method that uses standard complementary metal-oxide semiconductor fabrication steps is presented for generating the grating structure. Simulations show reduction in 1/e photon-penetration depth to one half the value that is expected with no grating.

© 1991 Optical Society of America

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