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Stress-induced birefringence images of diametrically compressed semiconductor disks are examined here. The experimentally observed images are compared with computer-simulated images for (100) and (111) orientation silicon disks. For a (100) oriented sample, the stress-optic coefficient C is found to depend on the position and on the orientation of the load axis with respect to the crystal principal axes. Computed values of C for the (100) orientation silicon varied from 2.0 × 10−12 to 3.0 × 10−12 cm2/dyn for a diametrically compressed disk with the load being applied at angles of 45° and 75° with respect to one of the crystal principal axes. As expected from the crystal symmetry, C was observed to be a constant for the (111) oriented silicon sample having a value of 2.33 × 10−12 cm2/dyn.
© 1988 Optical Society of America
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Pratul K. Ajmera, Burke Huner, Aloke K. Dutta, and Craig S. Hartley, "Simulation and observation of infrared piezobirefringent images in diametrically compressed semiconductor disks: erratum," Appl. Opt. 28, 1054_1-1054_1 (1989)https://opg.optica.org/ao/abstract.cfm?uri=ao-28-6-1054_1
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