Abstract

Indium–tin–oxyfluoride (ITOF) films were prepared by dc magnetron sputtering of indium–tin in Ar + O₂ + CF₄. Spectrophotometric measurements in the 0.2–2.5-μm wavelength range were used to evaluate the dielectric function. Wide band gap ITOF, with a refractive index of ~1.5 in the visible and good durability, was produced at a rate of ~1.2 nms⁻¹. ITOF is well suited for antireflecting transparent and conducting indium–tin–oxide coatings.

© 1988 Optical Society of America

Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering

Zhi-Zheng Ye and Jin-Fa Tang
Appl. Opt. 28(14) 2817-2819 (1989)

Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

Bo-Huei Liao, Chien-Cheng Kuo, Pin-Jen Chen, and Cheng-Chung Lee
Appl. Opt. 50(9) C106-C110 (2011)

Optical properties of sputter-deposited cerium oxyfluoride thin films

S.-Y. Zheng, A. M. Andersson-Fäldt, B. Stjerna, and C. G. Granqvist
Appl. Opt. 32(31) 6303-6309 (1993)

Transparent conductive indium oxide film deposited on low temperature substrates by activated reactive evaporation

O. Marcovitch, Z. Klein, and I. Lubezky
Appl. Opt. 28(14) 2792-2795 (1989)

Tri-band transparent conductive coating of indium tin oxide

Huafei Du, Mingyun Lv, Junhui Meng, and Weiyu Zhu
Appl. Opt. 55(34) D115-D119 (2016)