Abstract

An x-ray lithography system is analyzed by taking account of the partial coherence of the x-ray wave. The transfer characteristic proposed in an earlier paper [ J. Opt. Soc. Am. A 1, 11 ( 1984)] is used in the evaluation. First, the simulated replication patterns obtained by using the method are compared with some experimental results. Then an optimum construction for an x-ray lithography system is discussed. It is concluded that, if the optimum ratio between the lateral spread of the x-ray source and the distance between the source and the mask is chosen, high-resolution patterns can be produced with minimum exposure time.

© 1986 Optical Society of America

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