Abstract

Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thin sputtered layer of ZnO and Au. The sputtering parameters for the ZnO layer were optimized. The IV characteristics and the sensitivity spectra of the ZnO–Au photodiodes were investigated.

© 1986 Optical Society of America

Design of an ultraviolet radiometer. 1: Detector electrical characteristics

A. D. Wilson and H. Lyall
Appl. Opt. 25(24) 4530-4539 (1986)

Design of an ultraviolet radiometer. 2. Detector optical characteristics

A. D. Wilson and H. Lyall
Appl. Opt. 25(24) 4540-4546 (1986)

Optical and photoluminescence properties of ZnO_1-xSe_x thin films

Volodymyr V. Khomyak, Olexiy M. Slyotov, and Sergiy M. Chupyra
Appl. Opt. 53(10) B110-B115 (2014)

Effects of B₂O₃ doping on the crystalline structure and performance of DC-magnetron-sputtered, transparent ZnO thin films

Anh Tuan Thanh Pham, Phuong Ai Thi Nguyen, Yen Kim Thi Phan, Truong Huu Nguyen, Dung Van Hoang, Oanh Kieu Truong Le, Thang Bach Phan, and Vinh Cao Tran
Appl. Opt. 59(19) 5845-5850 (2020)

Biaxial stress and optoelectronic properties of Al-doped ZnO thin films deposited on flexible substrates by radio frequency magnetron sputtering

Hsi-Chao Chen, Po-Wei Cheng, and Kuo-Ting Huang
Appl. Opt. 56(4) C163-C167 (2017)