Abstract

A quantitative theoretical model for the radiative performance of heavily n-doped semiconductors is presented. It embraces the combined effects of valence electrons, free electrons, and polar optical phonons. The model is applied to indium-tin-oxide films and is used to compute integrated luminous, solar, and thermal properties. Optimization of film thickness and electron density can yield single uniform coatings on glass with 78% normal solar transmittance and 20% hemispherical thermal emittance.

© 1985 Optical Society of America

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