Abstract

A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4×10-16W/Hz at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 cm2 and a time constant of 20 msec at a bath temperature of 0.35 K.

© 1984 Optical Society of America

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