Abstract
Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6–4-μm spectral range with a noise equivalent power (NEP) of ~10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.
© 1981 Optical Society of America
Full Article | PDF ArticleMore Like This
Donald N. B. Hall, Richard S. Aikens, Richard Joyce, and Thomas W. McCurnin
Appl. Opt. 14(2) 450-453 (1975)
Y.-X. Zhang and F. O. Williamson
Appl. Opt. 21(11) 2036-2040 (1982)
E. J. Fjarlie
Appl. Opt. 16(2) 385-392 (1977)