Abstract

Gigahertz analog modulation characteristics of broad-area commercially available GaAlAs lasers have been investigated as a function of temperature and current in the vicinity of the upper frequency limit, where the resonance phenomena occur. The optimum temperature for small-signal amplitude modulation was found to be around −15°C for our particular broad-stripe geometry double-heterostructure laser. The Q was found to increase by a factor of 2 and the bandwidth by about 2%; the external quantum efficiency was maximized in this range. The optimum dc current bias was about 2% above the threshold current. Differential delays have also been measured down to a few picosecond accuracy by a unique phase-angle measurement method using a vector voltmeter. Some of the temperature effects observed may be related to mode changes and multimode and superradiance behavior.

© 1980 Optical Society of America

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