Very fast metal-semiconductor-metal ultraviolet photodectors on GaN with submicron finger width

J. Li; W. Donaldson; T. Hsiang

doi:10.1364/UEO.2003.ThB2

Ultrafast Electronics and Optoelectronics
Technical Digest (Optica Publishing Group, 2003),
paper ThB2
•https://doi.org/10.1364/UEO.2003.ThB2

Very fast metal-semiconductor-metal ultraviolet photodectors on GaN with submicron finger width

J. Li, W. Donaldson, and T. Hsiang

Ultrafast Electronics and Optoelectronics 2003

Washington, D.C. United States
15–16 January 2003
ISBN: 1-55752-728-8

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J. Li, W. Donaldson, and T. Hsiang, "Very fast metal-semiconductor-metal ultraviolet photodectors on GaN with submicron finger width," in Ultrafast Electronics and Optoelectronics, Technical Digest (Optica Publishing Group, 2003), paper ThB2.

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Abstract

We measured in time domain fast metal-semiconductor-metal ultraviolet photodetectors on GaN with sub-micrometer pitches. Results indicate a fixture-limited response of 26 ps at low illuminations. At higher illumination, space-charge screening is observed.

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