Abstract
Terahertz (THz) radiation is generated by exciting an un-doped InAs wafer with a femtosecond free-electron laser (FEL) at the Thomas Jefferson National Accelerator Facility. A microwatt level of THz radiation is detected from the unbiased InAs emitter when it is excited with the femtosecond FEL pulses operated at a wavelength of 1.06 μm and 10 W average power.
© 2001 Optical Society of America
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