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High-Carrier-Density Pump-Probe Measurements of Low-Temperature Grown GaAs

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Abstract

Pump-probe differential transmission measurements examine high-carrier-density phenomena in annealed GaAs samples grown at temperatures from 210° to 270° C. A simple two-leve1 rate equation model allows us to extract the trapped-electron lifetimes.

© 1997 Optical Society of America

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