Abstract

It is shown that the ICs in 10 Gb/s TDM systems can be fabricated with Si-bipolar production technologies while for 20 Gb/s systems present laboratory technologies are required. From the design of ICs for 40 Gb/s systems it is expected that this data rate can really be achieved using further improved Si-based technologies. However, the other circuit specifications must be relaxed compared to ICs in 10 and 20 Gb/s systems, which is possible by use of optical-fiber amplifiers and improved opto-electronic components. Moreover, speed critical circuits should be eliminated as far as possible.

© 1997 Optical Society of America