Abstract

Design, fabrication and testing of a GaAs-based highspeed resonant cavity enhanced (RCE) Schottky photodiode is reported. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In_0.08Ga_0.92As) and a distributed AlAs/GaAs Bragg mirror. The Schottky contact metal serves as a high reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photoresponse had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental set-up limited temporal response of 18 psec FWHM, corresponding to a 3-dB bandwidth of 20 GHz.

© 1997 Optical Society of America