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Ultrafast Carrier Relaxation in Semi-insulating GaAs Implanted with Arsenic Ions (GaAs:As)

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Abstract

Ultrafast carrier dynamics in damaged and nonstoichiometric Gallium arsenide (GaAs:X) has attracted much attention.1,2 Among those materials, the arsenic-rich GaAs film grown by molecular beam epitaxy (MBE) at low substrate temperatures of about 200 °C (so-called LT-GaAs), exhibits the shortest carrier relaxation time reported to date, about 200 femtoseconds (fs).2 Recently, the electrical properties of arsenic-rich GaAs layer fabricated by arsenic implantation of GaAs substrates (GaAs:As) have also been studied.3,4 This material exhibits similar electrical characteristics as the MBE grown LT-GaAs materials and requires simpler and less costly fabricating process. These advantages would make GaAs: As an attractive alternative to LT-GaAs which have been shown to be very promising for applications in ultrafast electronics and optoelectronics.5 In the present paper, we report preliminary data on ultrafast carrier dynamics of As-ion implanted GaAs samples. The carrier lifetimes have been determined for substrates implanted with different dosage of arsenic ions.

© 1995 Optical Society of America

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