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Conferences > UEO > 1995 > UMA > UMA3

Submicron Schottky-Collector AlAs/InGaAs/InP Resonant Tunnel Diodes

M. Reddy, M. J. Mondry, S. C. Martin, R. E. Muller, R. P. Smith, M. J. W. Rodwell, D. H. Chow, and J. N. Schulman

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Abstract

Resonant tunnel diodes(RTD) are currently the widest bandwidth semiconductor devices [1,2], useful for high frequency oscillators and picosecond pulse generators. 712GHz oscillators [2] and pulse generators [3] fabricated with ~ 1.0TH.z bandwidth InAs/AlSb RTDs, are some examples of high speed RTD applications. Here, we report the fabrication, DC, and microwave characteristics of AlAs/In0.53Ga0.47.As/InP Schottky-collector resonant tunnel diodes (SRTDs) with deep submicron Schottky collectors and an estimated maximum frequency of oscillation fmax = 2.2TH z. Monolithic integration of severa1 SRTDs into sub-millimeter wave quasi optical oscillator arrays and for traveling wave deep sub-picosecond pulse generators is feasible with this device technology.

© 1995 Optical Society of America

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