Abstract

The successful application of direct laser modulation for very-high-speed digital transmission or microwave/millimeter-wave analog optical links requires: reductions in the drive currents required to achieve high modulation bandwidths, increases in the maximum intrinsic modulation bandwidths, reductions in laser chirp under high-speed direct modulation, and high-speed laser structures which can be monolithically integrated with high-speed transistors. Due to the maturity of GaAs transistor and circuit fabrication technologies, we have pursued the development of GaAs-based MQW lasers which address a11 of the above requirements. In addition, we have demonstrated the feasibility of utilizing the impurity-free interdiffusion (IFID) process to fabricate multi-wavelength, high-speed, pseudomorphic laser arrays; such components promise substantial increases in both single-fiber transmission capacity and network flexibility via wavelength division multiplexing (WDM).

© 1995 Optical Society of America