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Low-Temperature MBE Growth of IΠ-V Materials on Si Substrates

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Abstract

We investigate the molecular-beam epitaxial (MBE) growth of GaAs and In0.6Ga0.4As on Si substrates at low substrate temperatures. Such materials may allow direct integration of ultrafast photodetectors into Si- based integrated circuits. Femtosecond time-resolved surface reflectivity and photoconductor switching are used to explore material photonic properties. We observe free carrier lifetimes as short as <500 fs and photoconductor electrical responses as short as 600 fs.

© 1993 Optical Society of America

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