Abstract
We investigate the molecular-beam epitaxial (MBE) growth of GaAs and In0.6Ga0.4As on Si substrates at low substrate temperatures. Such materials may allow direct integration of ultrafast photodetectors into Si- based integrated circuits. Femtosecond time-resolved surface reflectivity and photoconductor switching are used to explore material photonic properties. We observe free carrier lifetimes as short as <500 fs and photoconductor electrical responses as short as 600 fs.
© 1993 Optical Society of America
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