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On-Wafer Optoelectronic Techniques for Millimeter-Wave Generation, Control, and Circuit Characterization

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Abstract

Using optoelectronic, techniques, the generation and true-time-delay phase-shift of 60-GHz broadband signals, as well as on-wafer circuit characterization exceeding 160 GHz, which is close the bandwidth limit of microstrip transmission line on a 4-mil thick GaAs wafer, have been demonstrated.

© 1993 Optical Society of America

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