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Low Temperature III-V MBE (LTMBE) grown materials have generated significant interest recently, due to their ultrafast recombination time, their relatively high mobility (even after post growth anneal), and the high resistivity as a result of this anneal [1]. The device applications for these materials include subpicosecond photoconductive switching, use as a buffer layer for active layers of high speed electronic devices, and use as optical waveguides [2]. The optical response of LTMBE GaAs and In.52AI.48As has been examined and their usefulness as a photoconductive switch has been demonstrated [3,4,5]. The ternary III-V material In.53Ga.47AS, lattice matched to InP, has been used extensively for optoelectronic devices operating at the direct bandgap of .75 eV.
© 1993 Optical Society of America
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