Fabrication of Microwave Compatible, Monolithic, High-Speed In0.53Ga0.47As/AlAs and InAs/AlSb Resonant Tunneling Diodes

E. özbay; D. H. Chow; J. N. Schulman; D. M. Bloom

doi:10.1364/UEO.1993.B9

Ultrafast Electronics and Optoelectronics
OSA Proceedings Series (Optica Publishing Group, 1993),
paper B9
•https://doi.org/10.1364/UEO.1993.B9

Fabrication of Microwave Compatible, Monolithic, High-Speed In_0.53Ga_0.47As/AlAs and InAs/AlSb Resonant Tunneling Diodes

E. özbay, D. H. Chow, J. N. Schulman, and D. M. Bloom

Ultrafast Electronics and Optoelectronics 1993

San Francisco, California United States
ISBN: 1-55752-275-8

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E. özbay, D. H. Chow, J. N. Schulman, and D. M. Bloom, "Fabrication of Microwave Compatible, Monolithic, High-Speed In0.53Ga0.47As/AlAs and InAs/AlSb Resonant Tunneling Diodes," in Ultrafast Electronics and Optoelectronics, J. Shah and U. Mishra, eds., Vol. 14 of OSA Proceedings Series (Optica Publishing Group, 1993), paper B9.

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Abstract

We report the fabrication of monolithic, microwave integrated circuit compatible, highspeed In_0.53Ga_0.47As/AlAs and AlSb/InAs RTD’s. Switching transition times of 1.7 psec are measured using electro-optic sampling techniques.

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