Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > UEO > 1993 > B > B2

Ultra-Deep Submicron Si MOSFETs with fT Exceeding 100 GHz

R. H. Yan, K. F. Lee, Y. O. Kim, D. Y. Jeon, D. M. Tennant, and E. H. Westerwick

Not Accessible

Your library or personal account may give you access

Abstract

We have implemented Si MOSFETs with polysilicon gate lengths of ~0.1 µm. These devices measured a record 116 and 51 GHz intrinsic fT, unity- current-gain cutoff frequency at room temperature, for N and PMOS, respectively. They also show good turn-off characteristics, meeting very large scale integration (VLSI) requirement.

© 1993 Optical Society of America

PDF Article
More Like This
Silicon Monolithically Integrated Optoelectronic Receiver

Y.-S. He, L. D. Garrett, J. C. Campbell, E. Tuncer, S.I. Javalagi, and D.-L. Kwong
IME7 Integrated Photonics Research (IPR) 1993

A Migration Path to Nano-Meter Lithography: From the viewpoint of VLSIs

Eiji Takeda
TuA.1 Soft X-Ray Projection Lithography (SXRAY) 1993

100 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode

Yih-Guei Wey, Kirk S. Giboney, John E. Bowers, Mark J. W. Rodwell, Pierre Silvestre, Prabhu Thiagrarajan, and Gary Y. Robinson
A11 Ultrafast Electronics and Optoelectronics (UEO) 1993

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use