Abstract

The growth process analysis of AlGaAs using time resolved optical normalized reflectance (NR) and reflectance anisotropy spectroscopy (RAS) was carried out. Suitable photon energy for monitoring was got from the dependence of NR and RAS on monitoring energies. Then in-situ monitoring of time resolved NR and RAS during MOVPE growth was conducted to analyze the dependences of NR and RAS on Al composition and growth rate.

© 2011 Optical Society of America

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