Abstract

ELO growth of InP was investigated in metal organic chemical vapor deposition (MOCVD) system. We investigated several different SiO2 patterns and varied growth conditions to optimize the growth rate, coalescence behavior, and overall material quality of InP ELO layers. We achieved a fast coalesced epitaxial layer of InP over the SiO2, and continue to evaluate and optimize its quality for potential photonics device applications.

© 2011 Optical Society of America

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