Abstract

The intrinsic NiO (i-NiO) layer was inserted between Au/ZnO interface, i.e., Au/NiO/ZnO, to improve the photo-response of Au/ZnO Schottky-barrier photodiodes (SPDs). As compared to the SPDs without NiO layer, the rectification ratio of SPDs with NiO was raised from 1.1 to 716 by about 651 times at ±2 V bias voltage and the ideality factor was reduced from 5.78 to 2.14, suggesting the SPDs with NiO layer exhibits fewer defect states than those in SPDs without NiO. Also the ultraviolet (320 nm) responsivity was increased from 0.0018 A/W to 1.83 A/W for the SPDs without and with NiO, respectively, owing to the absorption of NiO layer and the rejection ratio of 320 nm/500 nm was raised from 16.8 to 26.2, revealing the SPDs with NiO has a better noise rejection ability.

© 2018 The Author(s)

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