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Conferences > Sensors > 2014 > SeTu5A > SeTu5A.2

Terahertz Detection with Field-effect Transistors: Intrinsic versus Device Sensitivity Limits

Alvydas Lisauskas, Sebastian Boppel, Maris Bauer, Justinas Zdanevičius, Jonas Matukas, Viktor Krozer, and Hartmut G. Roskos

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Abstract

We discuss on both fundamental and practical limitations for detection sensitivity of terahertz radiation using different kinds of field-effect transistors. Presentation overview different material systems including silicon CMOS, AlGaN/GaN HEMTs, carbon nanotubes and graphene.

© 2014 Optical Society of America

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