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Calculation of enhanced direct-gap optical gain in uniaxial tensile strained and n+-doped Ge/GeSi quantum well

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Abstract

We calculate the direct-gap optical gain of uniaxial tensile strained and n+-doped Ge/GeSi quantum well. A net peak gain of 2061 cm−1 for TE-polarized light is predicted at reasonable strain value and doping concentration.

© 2016 Optical Society of America

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