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Techniques and Characteristics of VCSEL Arrays Bonded to CMOS Integrated Circuits

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Abstract

The bonding of large VCSEL arrays to CMOS integrated circuits has become an important research area since there is a growing need for chip to chip optical interconnects and large scale optical free-space parallel processing. We have recently demonstrated the bonding of 8×8 and 4×4 VCSEL arrays to foundry fabricated CMOS and GaAs MESFET integrated circuits] using three different flip chip bonding techniques. An example of an array bonded to CMOS is illustrated in the optical photomicrograph of figure 1. The previous papers [1-2] reported the basic optical and electrical characteristics of the bonded VCSELs. There showed that VCSELs could be bonded to CMOS chips without effecting the electrical performance of the CMOS or the optical characteristics of the VCSELs. The present paper reports the high frequency transient response and the thermal resistance of bonded VCSELs. Both experimental data and simulation are used to investigate these characteristics.

© 1999 Optical Society of America

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