Abstract

We present time-resolved THz transmission measurements on radiation damaged InP using an optical pump - THz probe experimental setup. From these measurements we can determine the ultrashort electron lifetimes in the conduction band. The photoexcited carriers undergo fast trapping in less than a picosecond with recombination taking place on longer timescales. For highly damaged samples the recombination dynamics can be explained only by taking into account an Auger assisted trapping process.

© 1998 Optical Society of America