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GaSb/GaAs self-assembled quantum dots (QDs) have been realized by molecular beam epitaxy [1-4]. GaSb/GaAs QDs should exhibit a type-II band alignment [2-3] in real space. In this case, holes are localized within the GaSb QDs, while due to Coulomb attraction the electrons form a shell around QDs.
© 1999 Optical Society of America
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