Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Leaky-mode effects in InAs quantum-dot infrared photodetectors coupled to metal photonic crystals

Not Accessible

Your library or personal account may give you access

Abstract

A metal photonic crystal integrated on the n+-doped top contact layer of an InAs quantum-dot infrared photodetector is investigated. The contact layer thickness impacts the photoresponse by the leaky mode characteristics of this antiguide structure.

© 2012 Optical Society of America

PDF Article
More Like This
Improving efficiency of quantum dot infrared photodetector by using photonic crystal framework in the active layer

Zhihui Chen, Ying Fu, and Zhongyuan Yu
CE_P39 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011

Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study

Zhiya Zhao, Kevin R. Lantz, Changhyun Yi, and Adrienne D. Stiff-Roberts
JTuA112 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

Exciton-photon coupling of InAs quantum dot in GaAs photonic crystal mode-gap nanocavities

Jie Gao, Sylvain Combrie, Baolai Liang, Gaelle Lehoucq, Diana L Huffaker, Dirk Englund, Alfredo De Rossi, and Chee Wei Wong
QTuL5 Quantum Electronics and Laser Science Conference (CLEO:FS) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.