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Conferences > QELS > 2012 > QF2G > QF2G.7

IR detection in wide-gap semiconductors using extreme nondegenerate two-photon absorption

Himansu S. Pattanaik, Dmitry A. Fishman, Scott Webster, David J. Hagan, and Eric W. Van Stryland

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Abstract

We compare GaAs and GaN for IR detection using extremely non-degenerate two-photon absorption. While the small gap material has larger ND-2PA and hence better sensitivity to IR, unwanted background from degenerate 2PA outweighs this advantage.

© 2012 Optical Society of America

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