Observation of intrinsic spin Hall effect in semiconductors

Lalani K. Werake; Brian A. Ruzicka; Hui Zhao

doi:10.1364/QELS.2010.QWC3

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper QWC3
•https://doi.org/10.1364/QELS.2010.QWC3

Observation of intrinsic spin Hall effect in semiconductors

Lalani K. Werake, Brian A. Ruzicka, and Hui Zhao

Quantum Electronics and Laser Science Conference 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

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Spin Dynamics (QWC)

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L. K. Werake, B. A. Ruzicka, and H. Zhao, "Observation of intrinsic spin Hall effect in semiconductors," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper QWC3.

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Abstract

The intrinsic spin Hall effect is observed in undoped GaAs quantum-well samples by temporally resolving the current generation process in the ballistic regime, where the extrinsic spin Hall effect is absent.

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