Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > QELS > 2010 > QThC > QThC2

Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, Hongping Zhao, G. S. Huang, Nelson Tansu, and Jacob B. Khurgin

Not Accessible

Your library or personal account may give you access

Abstract

We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.

© 2010 Optical Society of America

PDF Article
More Like This
Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, G. S. Huang, Hongping Zhao, Nelson Tansu, and Jacob B. Khurgin
CThL6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Stark Effect Induced by Photogenerated Carriers in Multiple GaN/AlN Asymmetric Coupled Quantum Wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, G. S. Huang, Hongping Zhao, Nelson Tansu, and Jacob B. Khurgin
CTuF6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Investigation of Blueshift of Photoluminescence Emission Peak in InGaN/GaN Multiple Quantum Wells

Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, and Nelson Tansu
JWA70 CLEO: Applications and Technology (CLEO:A&T) 2011

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use