488 nm irradiation induced photodarkening study of Yb-doped aluminosilicate and phosphosilicate fibers

J. K. Sahu; S. Yoo; A. J. Boyland; C. Basu; M. P. Kalita; A. Webb; C. L. Sones; J. Nilsson; D. N. Payne

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper JTuA27

488 nm irradiation induced photodarkening study of Yb-doped aluminosilicate and phosphosilicate fibers

J. K. Sahu, S. Yoo, A. J. Boyland, C. Basu, M. P. Kalita, A. Webb, C. L. Sones, J. Nilsson, and D. N. Payne

Quantum Electronics and Laser Science Conference 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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CLEO/QELS Poster Session I (JTuA)

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J. K. Sahu, S. Yoo, A. J. Boyland, C. Basu, M. P. Kalita, A. Webb, C. L. Sones, J. Nilsson, and D. N. Payne, "488 nm irradiation induced photodarkening study of Yb-doped aluminosilicate and phosphosilicate fibers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper JTuA27.

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Abstract

Photodarkening in highly Yb-doped aluminosilicate and phosphosilicate fibers, under 488 nm irradiation, is presented. Both irradiation-induced excess loss and post-irradiation temporal loss evaluations reveal that Yb-doped phosphosilicate fiber is highly resistant to photodarkening.

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